A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads.The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.
Patent
Non-magnetic semiconductor spin transistor
United States Patent and Trademark Office
02/17/2009
PDM V1.0, Open Access
Abstract
Details
- Title: Subtitle
- Non-magnetic semiconductor spin transistor
- Creators
- Kimberley C Hall (Inventor)Wayne H Lau (Inventor)Kenan Gündoǧdu (Inventor)Michael E Flatté (Inventor)Thomas F Boggess (Inventor)
- Contributors
- University of Iowa Research Foundation (Iowa City, IA, US) (Assignee)
- Resource Type
- Patent
- Publisher
- United States Patent and Trademark Office; United States
- Patent
- US Patent 7,492,022; United States Patent and Trademark Office (United States, Alexandria) - USPTO; Published; 11/068,562; 02/28/2005
- Number of pages
- 18 pages
- Language
- English
- Date published
- 02/17/2009
- Academic Unit
- UI Research Foundation
- Record Identifier
- 9983761958402771
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