Semiconductor heterostructure nanowire devices

Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound semiconductor materials, and/or to create nanowires in which embedded quantum dots experience negative hydrostatic pressure or high positive hydrostatic pressure, whereby a phase transitions may occur, and/or to create exciton crystals.