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PDM V1.0, Open Access
A device capable of storing information, comprising a new sulfide alloy embedded in a substrate, the alloy exhibiting a metal-semiconductor phase transition with hysteresis as a function of temperature and a positive temperature coefficient. In one embodiment of the device the bistable material may be represented by the formula Ba(Co1-x Nix)S2-y, wherein x is between 0 and 1 and y varies from 0-2.