The unipolar spin transistor includes a first semiconductor region having a conductivity type and a first spin polarization, and a second semiconductor region having a conductivity type that is the same conductivity type of the first semiconductor region and a second spin polarization that is different from the first spin polarization of the first semiconductor region, and a third semiconductor region having a conductivity type that is the same conductivity type of the first semiconductor region and the first spin polarization. The unipolar spin transistor can also include a magnetic semiconductor wherein the semiconductor material is in a high-resistance state when the second spin polarization of the second region is opposite to the first spin polarization of the first and third regions, and wherein the semiconductor material is in a low-resistance state when the second spin polarization of the second region is aligned to the first spin polarization of the first and third regions.
Patent
Unipolar spin transistor and the applications of the same
United States Patent and Trademark Office
02/24/2004
PDM V1.0, Open Access
Abstract
Details
- Title: Subtitle
- Unipolar spin transistor and the applications of the same
- Creators
- Michael Edward Flatté (Inventor)Giovanni Vignale (Inventor)
- Contributors
- University of Iowa Research Foundation (Iowa City, IA, US) (Assignee)University of Missouri (Columbia, MO) (Assignee)
- Resource Type
- Patent
- Publisher
- United States Patent and Trademark Office; United States
- Patent
- US Patent 6,696,737; United States Patent and Trademark Office (United States, Alexandria) - USPTO; Published; 10/455,766; 06/04/2003
- Number of pages
- 21 pages
- Language
- English
- Date published
- 02/24/2004
- Academic Unit
- UI Research Foundation; Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9983762083202771
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