Anholonomic spin manipulation in drift transport in semiconductors

B. J Moehlmann; Michael E Flatté

doi:10.48550/arxiv.1007.0909

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Anholonomic spin manipulation in drift transport in semiconductors

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Anholonomic spin manipulation in drift transport in semiconductors

B. J Moehlmann and Michael E Flatté

07/06/2010

DOI: 10.48550/arxiv.1007.0909

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Preprint (Author's original)This preprint has not been evaluated by subject experts through peer review. Preprints may undergo extensive changes and/or become peer-reviewed journal articles. Open Access

Abstract

We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any possible spin rotation due to transport around a closed path are constructed for electrons experiencing strain or electric fields in (001), (110), or (111)-grown zincblende semiconductor quantum wells. Spin decoherence due to travel along the path is negligible compared to the background spin decoherence rate. The small size of the designed paths (<100 nm scale in GaAs) may lead to applications in nanoscale spintronic circuits.

Physics - Mesoscale and Nanoscale Physics

Details

Title: Subtitle: Anholonomic spin manipulation in drift transport in semiconductors
Creators: B. J Moehlmann
Michael E Flatté
Resource Type: Preprint
DOI: 10.48550/arxiv.1007.0909
Language: English
Date posted: 07/06/2010
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984442016502771

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