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Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots
Preprint   Open access

Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots

N. R. S van Venrooij, A. R da Cruz, R. S. R Gajjella, P. M Koenraad, Craig E Pryor and Michael E Flatté
ArXiv.org
Cornell University
09/26/2023
DOI: 10.48550/arxiv.2309.15062
url
https://doi.org/10.48550/arxiv.2309.15062View
Preprint (Author's original)This preprint has not been evaluated by subject experts through peer review. Preprints may undergo extensive changes and/or become peer-reviewed journal articles. Open Access

Abstract

We find the single exciton's fine structure splitting (FSS), which splits its degenerate ground state manifold into singlets, nearly vanishes in highly asymmetric quantum dots due to the cancellation of splitting effects with markedly different origin. The dots simulated are those that emerge on top of etch pits through the droplet epitaxy growth process; these etch pit dots break square ($C_{4v}$) spatial symmetry, which has been previously associated with small FSS. Configuration interaction calculations predict a vanishing FSS at a specific finite etch pit displacement from the center of the dot, for a structure far from square symmetry. We thus predict that highly asymmetric quantum dots may still display negligible fine structure splitting, providing new avenues for high-fidelity generation of indistinguishable, polarization entangled photon pairs on demand.

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