Preprint
Lande g factors and orbital momentum quenching in semiconductor quantum dots
10/26/2004
DOI: 10.48550/arxiv.cond-mat/0410678
Abstract
We show that the electron and hole Lande g factors in self-assembled III-V
quantum dots have a rich structure intermediate between that expected for
paramagnetic atomic impurities and for bulk semiconductors. Strain, dot
geometry, and confinement energy significantly modify the effective g factors
of the semiconductor material from which the dot and barrier are constructed,
yet these effects are insufficient to explain our results. We find that the
quantization of the quantum dot electronic states further quenches the orbital
angular momentum of the dot states, pushing the electron g factor towards 2,
even when all the semiconductor constituents of the dot have negative g
factors. This leads to trends in the dot's electron g factors that are the
opposite of those expected from the effective g factors of the dot and barrier
material. Both electron and hole g factors are strongly dependent on the
magnetic field orientation; hole g factors for InAs/GaAs quatum dots have large
positive values along the growth direction and small negative values in-plane.
The approximate shape of a quantum dot can be determined from measurements of
this g factor asymmetry.
Details
- Title: Subtitle
- Lande g factors and orbital momentum quenching in semiconductor quantum dots
- Creators
- Craig E PryorMichael E Flatté
- Resource Type
- Preprint
- DOI
- 10.48550/arxiv.cond-mat/0410678
- Language
- English
- Date posted
- 10/26/2004
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984442020402771
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