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Nuclear-Electron Hyperfine Coupling of the Shallow States Associated with Vacancies in Gallium Nitride
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Nuclear-Electron Hyperfine Coupling of the Shallow States Associated with Vacancies in Gallium Nitride

Joseph Sink and Michael E Flatté
ArXiv.org
Cornell University
05/25/2026
DOI: 10.48550/arxiv.2605.26053
url
https://doi.org/10.48550/arxiv.2605.26053View
Preprint (Author's original) This preprint has not been evaluated by subject experts through peer review. Preprints may undergo extensive changes and/or become peer-reviewed journal articles. Open Access

Abstract

We use multiband real space Green's functions computed using open-boundary conditions for clean GaN to exactly solve the potential-scattering Dyson equation to obtain the electronic structure of single nitrogen and gallium vacancies. From these vacancy solutions, we compute the local density of states as well as the Fermi contact and anisotropic contributions to the hyperfine field in the vicinity of the defect. These quantities directly affect electrically-detected magnetic resonance signals, which can be used to identify these defects when present in GaN devices.
Physics - Materials Science

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