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Solid-state S = 1 spin centers with zero-field splitting as quantum simulators for S = 1/2 critical behavior
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Solid-state S = 1 spin centers with zero-field splitting as quantum simulators for S = 1/2 critical behavior

Troy Losey, Denis R Candido, Y Meurice, M. E Flatté, S. -W Tsai and Jin Zhang
ArXiv.org
09/15/2022
DOI: 10.48550/arxiv.2209.07516
url
https://doi.org/10.48550/arxiv.2209.07516View
Preprint (Author's original)This preprint has not been evaluated by subject experts through peer review. Preprints may undergo extensive changes and/or become peer-reviewed journal articles. Open Access

Abstract

In this work we propose a novel solid-state platform for creating quantum simulators based on implanted $S=1$ spin centers in semiconductors. We show that under the presence of an external magnetic field, an array of $S=1$ spin centers interacting through magnetic dipole-dipole interaction can be mapped into an effective spin-half system equivalent to the XYZ model in an external field. Interestingly, this system shows a wide range of phases and critical behaviors that can be obtained by changing both the magnetic field and the orientational displacement of the spin centers with respect to their main symmetry axis. Notably, our model contains a line where the system is in a critical floating phase that terminates at a Berezinskii-Kosterlitz-Thouless transition point and a Pokrovsky-Talapov transition point. It can also be tuned between an isotropic Heisenberg point and a transverse Ising universality class. We propose this system as the first quantum simulator for the floating phase with spin-centers in solid-state materials.

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