Preprint
Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices
ArXiv.org
Cornell University
11/30/2023
DOI: 10.48550/arxiv.2312.14933
Abstract
Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO2 MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity.
Details
- Title: Subtitle
- Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices
- Creators
- Nicholas J HarmonJames P AshtonPatrick M LenahanMichael E Flatté
- Resource Type
- Preprint
- Publication Details
- ArXiv.org
- DOI
- 10.48550/arxiv.2312.14933
- ISSN
- 2331-8422
- Publisher
- Cornell University; Ithaca, NY
- Language
- English
- Date posted
- 11/30/2023
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984544954202771
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