Spin Injection Enhancement Through Schottky Barrier Superlattice Design

Joseph Pingenot; Michael E Flatté

doi:10.48550/arxiv.0909.4594

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Spin Injection Enhancement Through Schottky Barrier Superlattice Design

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Spin Injection Enhancement Through Schottky Barrier Superlattice Design

Joseph Pingenot and Michael E Flatté

09/24/2009

DOI: 10.48550/arxiv.0909.4594

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Abstract

We predict it is possible to achieve high-efficiency room-temperature spin injection from a mag- netic metal into InAs-based semiconductors using an engineered Schottky barrier based on an InAs/AlSb superlattice. The Schottky barrier with most metals is negative for InAs and positive for AlSb. For such metals there exist InAs/AlSb superlattices with a conduction band edge perfectly aligned with the metal's Fermi energy. The initial AlSb layer can be grown to the thickness required to produce a desired interface resistance. We show that the conductivity and spin lifetimes of such superlattices are sufficiently high to permit efficient spin injection from ferromagnetic metals.

Details

Title: Subtitle: Spin Injection Enhancement Through Schottky Barrier Superlattice Design
Creators: Joseph Pingenot
Michael E Flatté
Resource Type: Preprint
DOI: 10.48550/arxiv.0909.4594
Language: English
Date posted: 09/24/2009
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984442212902771

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