Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride

Mohammad Abdullah Sadi; Luca Basso; David A Fehr; Xingyu Gao; Sumukh Vaidya; Emmeline G Riendeau; Gajadhar Joshi; Tongcang Li; Michael E Flatté; Andrew M Mounce; Yong P Chen

doi:10.48550/arxiv.2506.04448

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Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride

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Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride

Mohammad Abdullah Sadi, Luca Basso, David A Fehr, Xingyu Gao, Sumukh Vaidya, Emmeline G Riendeau, Gajadhar Joshi, Tongcang Li, Michael E Flatté, Andrew M Mounce, …

ArXiV.org

Cornell University

06/04/2025

DOI: 10.48550/arxiv.2506.04448

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Preprint (Author's original)This preprint has not been evaluated by subject experts through peer review. Preprints may undergo extensive changes and/or become peer-reviewed journal articles. Open Access

Abstract

Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional platform for quantum sensing, due to its optically addressable spin defects, such as the negatively charged boron vacancy ( ). Despite hBN being transferrable to close proximity to samples, spectral overlap of spin transitions due to large hyperfine interactions has limited its magnetic sensitivity. Here, we demonstrate spin-selective excitation of spin defects in hBN driven by circularly polarized microwave. Using a cross-shaped microwave resonance waveguide, we superimpose two orthogonally linearly polarized microwave shifted in phase from a RFSoC FPGA to generate circularly polarized microwaves. This enables selective spin or excitation of defects, as confirmed by optically detected magnetic resonance experimentally and supported computationally. We also investigate the influence of magnetic field on spin-state selectivity. Our technique enhances the potential of hBN platform for quantum sensing through better spin state control and magnetic sensitivity particularly at low fields.

Physics - Quantum Physics

Details

Title: Subtitle: Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride
Creators: Mohammad Abdullah Sadi - Purdue University West Lafayette
Luca Basso - Sandia National Laboratories
David A Fehr - University of Iowa
Xingyu Gao - Purdue University West Lafayette
Sumukh Vaidya - Purdue University West Lafayette
Emmeline G Riendeau - Purdue University West Lafayette
Gajadhar Joshi - Sandia National Laboratories
Tongcang Li - Purdue University West Lafayette
Michael E Flatté - University of Iowa
Andrew M Mounce - Sandia National Laboratories
Yong P Chen - Purdue University West Lafayette
Resource Type: Preprint
Publication Details: ArXiV.org
DOI: 10.48550/arxiv.2506.04448
ISSN: 2331-8422
Publisher: Cornell University; Ithaca, New York
Language: English
Date posted: 06/04/2025
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984827327002771

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