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Triple V-shaped type-II quantum wells for long wavelength interband cascade lasers
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Triple V-shaped type-II quantum wells for long wavelength interband cascade lasers

B Petrović, T Sato, S Birner, J Zanon, M. E Flatté, R Weih, F Hartmann and S Höfling
ArXiV.org
Cornell University
05/22/2025
DOI: 10.48550/arxiv.2505.16684
url
https://doi.org/10.48550/arxiv.2505.16684View
Preprint (Author's original)This preprint has not been evaluated by subject experts through peer review. Preprints may undergo extensive changes and/or become peer-reviewed journal articles. Open Access

Abstract

We investigate triple V-shaped type-II quantum wells designed to emit at 6-9 {\mu}m wavelength range, consisting of three InAs(Sb) electron quantum wells and two Ga0.6In0.4Sb hole quantum wells. The wells' composition and thicknesses are optimized in terms of wavefunction overlap and valence intersubband absorption (VISA) by using kp calculation. The triple V-shaped type-II quantum well designed for emission at 6.2 {\mu}m, 7.5 {\mu}m and 9.0 {\mu}m, show 18.8 %, 18.9 % and 19.2 % higher wavefunction overlap respectively, compared to the corresponding W-shaped designs of InAs/Ga0.6In0.4Sb/InAs wells commonly employed in active regions of interband cascade lasers. In addition, the calculated VISA in V-shaped quantum wells for the designed wavelength is significantly smaller than in W-shaped wells. These enhancements might extend the wavelength limit of room temperature emission of GaSb-based interband cascade lasers.
Physics - Applied Physics

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