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Unraveling Ultrafast Photoionization in Hexagonal Boron Nitride
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Unraveling Ultrafast Photoionization in Hexagonal Boron Nitride

Lianjie Xue, Song Liu, Yang Hang, Adam M Summers, Derrek J Wilson, Xinya Wang, Pingping Chen, Thomas G Folland, Jordan A Hachtel, Hongyu Shi, …
ArXiv.org
01/25/2021
DOI: 10.48550/arxiv.2101.10429
url
https://doi.org/10.48550/arxiv.2101.10429View
Preprint (Author's original)This preprint has not been evaluated by subject experts through peer review. Preprints may undergo extensive changes and/or become peer-reviewed journal articles. Open Access

Abstract

The non-linear response of dielectrics to intense, ultrashort electric fields has been a sustained topic of interest for decades with one of its most important applications being femtosecond laser micro/nano-machining. More recently, renewed interests in strong field physics of solids were raised with the advent of mid-infrared femtosecond laser pulses, such as high-order harmonic generation, optical-field-induced currents, etc. All these processes are underpinned by photoionization (PI), namely the electron transfer from the valence to the conduction bands, on a time scale too short for phononic motion to be of relevance. Here, in hexagonal boron nitride, we reveal that the bandgap can be finely manipulated by femtosecond laser pulses as a function of field polarization direction with respect to the lattice, in addition to the field's intensity. It is the modification of bandgap that enables the ultrafast PI processes to take place in dielectrics. We further demonstrate the validity of the Keldysh theory in describing PI in dielectrics in the few TW/cm2 regime.

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