Valence state manipulation of single Fe impurities in GaAs by STM

J Bocquel; V. R Kortan; R. P Campion; B. L Gallagher; M. E Flatté; P. M Koenraad

doi:10.48550/arxiv.1203.6293

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Valence state manipulation of single Fe impurities in GaAs by STM

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Valence state manipulation of single Fe impurities in GaAs by STM

J Bocquel, V. R Kortan, R. P Campion, B. L Gallagher, M. E Flatté and P. M Koenraad

ArXiv.org

Cornell University

03/28/2012

DOI: 10.48550/arxiv.1203.6293

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Preprint (Author's original)This preprint has not been evaluated by subject experts through peer review. Preprints may undergo extensive changes and/or become peer-reviewed journal articles. Open Access

Abstract

The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend strongly on its charge state. We demonstrate that an applied tip voltage can be used to manipulate the valence and spin state of single Fe impurities in GaAs. In particular we can induce a transition from the Fe{3+)- 3d5 - isoelectronic state to the Fe{2+} - 3d6 - ionized acceptor state with an associated change of the spin moment. Fe atoms sometimes produce dark anisotropic features in topographic maps, which is consistent with an interference between different tunneling paths.

Materials Science

Mesoscale and Nanoscale Physics

Details

Title: Subtitle: Valence state manipulation of single Fe impurities in GaAs by STM
Creators: J Bocquel
V. R Kortan
R. P Campion
B. L Gallagher
M. E Flatté
P. M Koenraad
Resource Type: Preprint
Publication Details: ArXiv.org
Publisher: Cornell University
DOI: 10.48550/arxiv.1203.6293
ISSN: 2331-8422
Number of pages: 5
Language: English
Date posted: 03/28/2012
Academic Unit: Physics and Astronomy; Electrical and Computer Engineering
Record Identifier: 9984442010002771

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