Conference proceeding
PIN versus PN homojunctions in GaInAsSb 2.0-2.5 micron mesa photodiodes
Proceedings of SPIE, Vol.6119(1), pp.611903-611908
Semiconductor Photodetectors III
02/09/2006
DOI: 10.1117/12.647109
Abstract
The performances of a pin versus a pn structure from GaInAsSb materials operating at room temperature are compared both from a theoretical point of view and experimentally. Theoretically, it is found in materials limited by generation-recombination currents, pn junctions have a higher D* than pin junctions. The thinner depletion region of pn junctions results in a lower responsivity but a higher dynamic resistance, giving an overall higher D* compared to a pin structure. A series of five p+pn+ Ga
In
As
Sb
detector structures latticed matched to GaSb substrates and with 2.37 m cut off wavelength were grown by molecular beam epitaxy and processed into variable size mesa photodiodes. Only the doping of the absorbing (p) region was varied from sample to sample, starting with nominally undoped (~1x10
cm
pbackground doping due to native defects) and increasing the doping until a p+n+ structure was attained. Room temperature dynamic resistance-area product R0A was measured for each sample. A simple method is presented and used to disentangle perimeter from areal leakage currents. All five samples had comparable R0A's. Maximum measured R0A was 30 -cm
in the largest mesas. Extracted R0A's in the zero perimeter/area limit were about ~50 -cm
(20-100 -cm
) for all samples. Within uncertainty, no clear trend was seen. Tentative explanations are proposed.
Details
- Title: Subtitle
- PIN versus PN homojunctions in GaInAsSb 2.0-2.5 micron mesa photodiodes
- Creators
- J. P Prineas - University of IowaJ. R Yager - University of IowaJ. T Olesberg - University of IowaS Seydmohamadi - University of IowaC Cao - University of IowaM Reddy - University of IowaC Coretsopoulos - University of IowaJ. L Hicks - University of IowaT. F Boggess - University of IowaM Santilli - University of KansasL Olafsen - University of Kansas
- Resource Type
- Conference proceeding
- Publication Details
- Proceedings of SPIE, Vol.6119(1), pp.611903-611908
- Conference
- Semiconductor Photodetectors III
- DOI
- 10.1117/12.647109
- ISSN
- 0277-786X
- Language
- English
- Date published
- 02/09/2006
- Academic Unit
- Physics and Astronomy; Chemical and Biochemical Engineering
- Record Identifier
- 9984197064402771
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