Journal article
Cascaded active regions in 2.4 μ m GaInAsSb light-emitting diodes for improved current efficiency
Applied physics letters, Vol.89(21), pp.211108-211108-3
11/21/2006
DOI: 10.1063/1.2392993
Abstract
By cascading multiple GaInAsSb active regions, the authors have fabricated
2.4
μ
m
light-emitting diodes that, for a given light output, operate at reduced current and higher voltage, which can be advantageous for battery-powered sensor applications. Tunnel heterojunctions separating emission regions add no measurable series resistance. Devices are demonstrated at room temperature with continuous wave output.
Details
- Title: Subtitle
- Cascaded active regions in 2.4 μ m GaInAsSb light-emitting diodes for improved current efficiency
- Creators
- J Prineas - University of IowaJ Olesberg - University of IowaJ Yager - University of IowaC Cao - University of IowaC Coretsopoulos - University of IowaM Reddy - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.89(21), pp.211108-211108-3
- Publisher
- American Institute of Physics
- DOI
- 10.1063/1.2392993
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Grant note
- DK-60657 / NIH DK-02925 / NIH
- Language
- English
- Date published
- 11/21/2006
- Academic Unit
- Chemical and Biochemical Engineering; Physics and Astronomy
- Record Identifier
- 9984197275802771
Metrics
6 Record Views